Filtry
Filtry
Układy scalone pamięci
| Obraz | część # | Opis | producent | Akcje | RFQ | |
|---|---|---|---|---|---|---|
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W25Q128FVSJP |
PAMIĘĆ FLASH IC 128MB
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Elektronika Winbonda
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MT46H32M32LFB5-5 IT:B |
IC DRAM 1G PARALLEL 90VFBGA
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Technologia mikronowa
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MT4A3A3A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A4A5 |
IC DRAM 512M PARALLEL 90VFBGA
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Technologia mikronowa
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W25Q16FWSNIQ |
Układ scalony FLASH 16M SPI 104MHZ 8SOIC
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Elektronika Winbonda
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24AA16-I/MS |
IC EEPROM 16K I2C 400KHZ 8MSOP
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Technologia mikroczipów
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W958D6DBCX7I TR |
Układ scalony PSRAM 256M RÓWNOLEGŁY 54VFBGA
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Elektronika Winbonda
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AT25DN011-MAHFHT-T |
IC FLASH 1M SPI 104MHZ 8UDFN
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Adesto Technologies
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MT4S1S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2 |
IC DRAM 2G RÓWNOLEGŁY 84FBGA
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Technologia mikronowa
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MT41K512M8DA-093 IT:P TR |
IC DRAM 4G PARALLEL 78FBGA
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Technologia mikronowa
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MT46H32M16LFBF-5 AIT:C |
IC DRAM 512M PARALLEL 60VFBGA
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Technologia mikronowa
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W25Q32FVZEIG TR |
Układ scalony FLASH 32M SPI 104MHZ 8WSON
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Elektronika Winbonda
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MT41K512M4HX-15E:D |
IC DRAM 2G PARALLEL 78FBGA
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Technologia mikronowa
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W25Q256FVCIF TR |
Układ scalony FLASH 256M SPI 24TFBGA
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Elektronika Winbonda
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MT29F256G08CECCBH6-6C:C |
IC FLASH 256G PARALLEL 167MHZ
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Technologia mikronowa
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D9PRS |
IC DRAM 2G PARALLEL 96FBGA
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Technologia mikronowa
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MTFC4GMVEA-WT |
Układ scalony FLASH 32G MMC 153WFBGA
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Technologia mikronowa
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BR24A08FJ-WME2 |
IC EEPROM 8K I2C 400KHZ 8SOPJ
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Rohm Semiconductor
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MT4zastosowanie |
LPDDR4 32G 512MX64 FBGA QDP
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Technologia mikronowa
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MT29F16G08CBECBL72A3WC1P |
IC FLASH 16G PARALLEL WAFER
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Technologia mikronowa
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MT4A1G8WE-083E AAT:B |
IC DRAM 8G RÓWNOLEGŁY 78FBGA
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Technologia mikronowa
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MT48V8M16LFB4-10 IT:G TR |
IC DRAM 128M RÓWNOLEGŁY 54VFBGA
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Technologia mikronowa
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BR25L010FVM-WTR |
Układ scalony EEPROM 1K SPI 5MHZ 8MSOP
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Rohm Semiconductor
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MT41K2G8KJR-125:A |
Układ scalony DRAM 16G RÓWNOLEGŁY 78FBGA
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Technologia mikronowa
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AT25DF321-S3U |
Układ scalony FLASH 32M SPI 70MHZ 16SOIC
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Adesto Technologies
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MT29VZZZ7C7DQKWL-062 W ES.97Y TR |
MLC EMMC/LPDDR3 280G
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Technologia mikronowa
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MTFC8GACAENS-5M AAT TR |
Układ scalony FLASH 64G MMC
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Technologia mikronowa
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W25Q128FVPJQ |
PAMIĘĆ FLASH IC 128MB
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Elektronika Winbonda
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MT29F1G08ABCHC:C |
IC FLASH 1G RÓWNOLEGŁY 63VFBGA
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Technologia mikronowa
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MT2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M2M |
IC FLASH 3T PARALLEL 333MHZ
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Technologia mikronowa
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MT29F4G08ABBDAHC-AIT: |
IC FLASH 4G RÓWNOLEGŁY FBGA
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Technologia mikronowa
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AT45DQ161-MHD2B-T |
Układ scalony FLASH 16M SPI 100MHZ 8UDFN
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Adesto Technologies
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MT42L256M16D1GU-18 WT:A TR |
Układ scalony DRAM 4G RÓWNOLEGŁY 134FBGA
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Technologia mikronowa
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MTFC4GGQDQ-IT TR |
IC FLASH 32G MMC 100LBGA
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Technologia mikronowa
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BR93G46-3A |
MAGISTRALI MIKROWIRE 1KBIT (64X16BIT) EE
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Rohm Semiconductor
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MT4W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3W3 |
IC DRAM 128M PARALLEL 90VFBGA
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Technologia mikronowa
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W25Q64FVSCB1 |
IC FLASH 64M SPI 104MHZ
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Elektronika Winbonda
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MT4S1S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S2S |
IC DRAM 1G RÓWNOLEGŁY 84FBGA
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Technologia mikronowa
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N25Q128A11ESE40F TR |
IC FLASH 128M SPI 108MHZ 8SOP2
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Technologia mikronowa
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MT29F64G08CBCGBSX-37BES:G TR |
IC FLASH 64G RÓWNOLEGLE 167 MHz
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Technologia mikronowa
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M95256-RMN6P |
IC EEPROM 256K SPI 20MHZ 8SO
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STMikroelektronika
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MT46V128M4FN-5B:D TR |
Układ scalony DRAM 512M RÓWNOLEGŁY 60FBGA
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Technologia mikronowa
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MT47H32M8BP-3:B TR |
IC DRAM 256M RÓWNOLEGLE 60FBGA
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Technologia mikronowa
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W9812G2KB-6 |
IC DRAM 128M RÓWNOLEGLE 90TFBGA
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Elektronika Winbonda
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MT48LC8M8A2TG-75 L:G |
IC DRAM 64M RÓWNOLEGLE 54TSOP
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Technologia mikronowa
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MT42L64M32D1TK-18 AAT:C TR |
IC DRAM 2G RÓWNOLEGŁY 533 MHz
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Technologia mikronowa
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BR24T02FVJ-WGE2 |
IC EEPROM 2K I2C 400KHZ 8TSSOP
|
Rohm Semiconductor
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MT29F4G16ABADAM60A3WC1 |
IC FLASH 4G PARALLEL WAFER
|
Technologia mikronowa
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MT4A1G4RH-075E:B |
IC DRAM 4G PARALLEL 1,33 GHz
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Technologia mikronowa
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MT41K128M8JP-125:G |
IC DRAM 1G PARALLEL 78FBGA
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Technologia mikronowa
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MT4D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3D3 |
IC DRAM 256M PARALLEL 66TSOP
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Technologia mikronowa
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